NXP Semiconductors
BAT754L
Schottky barrier triple diode
BAT754L
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? NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
3
/
9
Symbol
Parameter
Conditions
Min
Max
Unit
Tstg
storage temperature
-65
150
°C
6.
Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
416
K/W
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7.
Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
IF
= 0.1 mA; pulsed; t
p
≤ 300 μs;
δ
≤ 0.02 ; T
amb
= 25 °C
-
-
200
mV
IF
= 1 mA; pulsed; t
p
≤ 300 μs;
δ
≤ 0.02 ; T
amb
= 25 °C
-
-
260
mV
IF
= 10 mA; pulsed; t
p
≤ 300 μs;
δ
≤ 0.02 ; T
amb
= 25 °C
-
-
340
mV
IF
= 30 mA; pulsed; t
p
≤ 300 μs;
δ
≤ 0.02 ; T
amb
= 25 °C
-
-
420
mV
VF
forward voltage
IF
= 100 mA; pulsed; t
p
≤ 300 μs;
δ
≤ 0.02 ; T
amb
= 25 °C
-
-
750
mV
IR
reverse current
VR
= 25 V; pulsed; t
p
≤ 300 μs;
δ
≤ 0.02 ; T
amb
= 25 °C
-
-
2
μA
Cd
diode capacitance
VR
= 1 V; f
= 1 MHz; T
amb
= 25 °C
-
-
10
pF